TC1300 Datasheet, PDF (6/16 Pages) Microchip Technology – 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function

TC1300
2.0 TYPICAL CHARACTERISTICS (CON’T)
Junction temperature (T_J) is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
Ambient temperature is not significant.
60
V_IN = 3.8V
V_OUT = 2.8V
45
I_OUT = 50 mA
C_OUT = 10 µF
C_OUTesr = 0.25 :
30
C_BYPASS = 0 µF
15
0
10
100
110k00 101000k0 101000k0 10010M000
Frequency (Hz)
FIGURE 2-7:
Power Supply Rejection
Ratio vs. Frequency.
0.3
V_OUT = 5.0V
0.25
T_J = +125°C ^{TJ = -40°C}
0.2
0.15
T_J = +25°C
0.1
0.05
0
0
100
200
300
400
Load Current (mA)
FIGURE 2-10:
Current (5.0V).
Dropout Voltage vs. Load
2.6330
2.6325
2.6320
2.6315
2.6310
2.6305
2.6300
2.6295
2.6290
2.6285
2.6280
2.6275
-40 -25 -10 5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-8:
Reset Voltage Threshold vs.
Junction Temperature.
FIGURE 2-11:
Wake-Up Response Time.
0.90
V_IN = V_OUT + 1V
0.80
0.70
V_OUT = 3.0V
0.60
0.50
V_OUT = 2.5V
0.40
0.30
V_OUT = 5.0V
0.20
-40 -25 -10 5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-9:
Temperature.
Load Regulation vs.
300
250
10 mV Overdrive
200
100 mV Overdrive
150
100
50
0
-40 -25 -10 5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-12:
Temperature.
V_DET to Reset Delay vs.
DS21385C-page 6
 2002 Microchip Technology Inc.