TC1300 Datasheet, PDF (3/16 Pages) Microchip Technology – 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function

TC1300
ELECTRICAL CHARACTERISTICS (CONTINUED)
V_IN = V_OUT + 1V, I_L = 0.1 mA, C_L = 3.3 µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Dropout Voltage (Note 4)
V_{IN –}V_OUT
—
Supply Current
I_SS1
—
Shutdown Supply Current
I_SS2
—
Power Supply Rejection Ratio
PSRR
—
Output Short Circuit Current
Thermal Regulation
Output Noise
I_OUTSC
—
∆V_OUT/∆P_D
—
eN
—
Wake-Up Time
(from Shutdown Mode)
t_WK
—
1
70
210
80
30
60
800
0.04
900
10
30
130
390
160
60
—
1200
—
—
20
mV I_L = 0.1 mA
I_L = 100 mA
I_L = 300 mA
µA SHDN = V_IH
µA SHDN = 0V
dB
mA
%/W
f ≤ 1 kHz, C_BYPASS = 1 nF
V_OUT = 0V
Note 5
nV/Hz
µsec
f < 1 kHz, C_OUT = 1 µF,
R_LOAD = 50 Ω,
C_BYPASS = 1 nF
C_IN = 1 µF, V_IN = 5V,
C_OUT = 4.7 µF, I_L = 30 mA,
See Figure 3-2
Settling Time
(from Shutdown Mode)
Thermal Shutdown Die
Temperature
ts
—
50
—
µsec C_IN = 1 µF, V_IN = 5V
C_OUT = 4.7 µF
I_L = 30 mA, See Figure 3-2
T_SD
—
150
—
°C
Thermal Shutdown Hysteresis
T_HYS
—
10
—
°C
Thermal Resistance Junction to RthetaJA
—
200
Case
—
°C/Watt EIA/JEDEC JESD51-751-7 4-
Layer Board
SHDN Input High Threshold
V_IH
45
—
—
%V_IN V_IN = 2.5V to 6.0V
SHDN Input Low Threshold
V_IL
—
—
15
%V_IN V_IN = 2.5V to 6.0V
Note 1: V_R is the regulator output voltage setting.
2:
TCVOUT
=
(_---V_{----O-----U-----T---M------A----X-----–-----}V_{----O----U-----T----M-----I---N----})_----×_-----1_--0_----⁶_-
VOUT × ∆T
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7: The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ (V_R + V_DROPOUT).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
 2002 Microchip Technology Inc.
DS21385C-page 3