TC1300 Datasheet, PDF (4/16 Pages) Microchip Technology – 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function

TC1300
ELECTRICAL CHARACTERISTICS (CONTINUED)
V_IN = V_OUT + 1V, I_L = 0.1 mA, C_L = 3.3 µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
RESET Output
Voltage Range
V_DET
1.0
—
1.2
—
6.0
V T_A = 0°C to +70°C
6.0
T_A = – 40°C to +125°C
Reset Threshold
V_TH
2.59
2.63
2.66
V TC1300R-XX, T_A = +25°C
2.55
—
2.70
TC1300R-XX,
T_A = – 40°C to +125°C
2.36
2.40
2.43
TC1300Y-XX, T_A = +25°C
2.32
—
2.47
TC1300Y-XX,
T_A = – 40°C to +125°C
Reset Threshold Tempco
∆V_TH / ∆T
—
30
—
ppm/°C
V_DET to Reset Delay
t_RPD
—
160
—
µsec V_DET = V_TH to (V_TH – 100 mV)
Reset Active Timeout Period
t_RPU
140
300
560
msec
RESET Output Voltage Low
V_OL
—
—
0.3
V V_DET = V_TH min,
I_SINK = 1.2 mA
RESET Output Voltage High
V_OH
0.8 V_DET
—
—
V V_DET > V_TH max,
I_SOURCE = 500 µA
Note 1: V_R is the regulator output voltage setting.
2:
TCVOUT
=
(_---V_{----O-----U-----T---M------A----X-----–-----}V_{----O----U-----T----M-----I---N----})_----×_-----1_--0_----⁶_-
VOUT × ∆T
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7: The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ (V_R + V_DROPOUT).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
DS21385C-page 4
 2002 Microchip Technology Inc.