MIC4600 Datasheet, PDF (4/26 Pages) Microchip Technology – 28V Half-Bridge MOSFET Driver

MIC4600
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V_IN = V_EN = 12V, V_BST – V_SW = 5V; T_A = 25°C,
C_VIN = C_VDD = 1 μF. Bold values indicate –40°C ≤ T_J ≤ +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Fault
Fault Over Temperature
Over Temperature
Hysteresis
—
150
—
—
23
—
°C T_J Rising
°C —
FAULT Logic Level Low
FAULT Pin Leakage
Current
—
0.05
0.2
—
0.01
0.1
V I_FAULT = 5 mA
μA V_FAULT = 5.5V
Input Control
HSI Logic Level High
1.4
—
—
V—
HSI Logic Level Low
—
—
0.65
V—
HSI Bias Current
LSI Logic Level High
—
0.01
0.1
1.4
—
—
μA V_HSI = 5V
V—
LSI Logic Level Low
—
—
0.65
V—
LSI Bias Current
Timing
—
0.01
0.1
μA V_LSI = 5V
Dead Time
Switching Frequency
Range
—
18.7
—
ns R_DELAY = 105 kΩ
—
1.5
MHz —
Minimum Allowable Pulse
Width
—
32
—
ns —
Rise Time (DH, DL)
Fall Time (DH,DL)
Propagation Delay,
Rising HSI to DH
—
15
—
—
13.5
—
—
26
—
ns
C_LOAD = 3 nF, 10%V_DD to
90%V_DD
ns
C_LOAD = 3 nF, 90%V_DD to
10%V_DD
ns GND to 10%xV_DD
Propagation Delay,
Rising LSI to DL
—
18
—
ns GND to 10%xV_DD
Propagation Delay,
Falling HSI to DH
—
55
—
ns V_DD to 90%xV_DD
Propagation Delay,
Falling LSI to DL
—
14
—
ns V_DD to 90%xV_DD
MOSFET Drivers
DH R_DS(ON), High
—
2
3
DH R_DS(ON), Low
—
1.5
3
DL R_DS(ON), High
—
2
3
DL R_DS(ON), Low
—
1
2
Note 1: Specified for packaged product only.
Ω I_DH = 20 mA
Ω I_DH = –20 mA
Ω I_DL = 20 mA
Ω I_DL = –20 mA
DS20005584A-page 4
 2016 Microchip Technology Inc.