TC1264_06 Datasheet, PDF (3/18 Pages) Microchip Technology – 800 mA Fixed-Output CMOS LDO with Shutdown

TC1264
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, V_IN = V_R + 1.5V, (Note 1), I_L = 100 µA, C_L = 3.3 µF, SHDN > V_IH,
T_A = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Thermal Regulation
ΔV_OUT/ΔP_D
—
0.04
—
V/W Note 7
Output Noise
eN
—
260
—
nV/√Hz I_L = I_OUTMAX, F = 10 kHZ
Note 1: V_R is the regulator output voltage setting.
2: The minimum V_IN has to justify the conditions: V_IN ≥ V_R + V_DROPOUT and V_IN ≥ 2.7V for I_L = 0.1 mA to I_OUTMAX.
3: This accuracy represents the worst-case over the entire output current and temperature range.
4:
TCV_OUT = -⁽--^V----^O----^U---^T---^M-----^A--_V-^X---_O-–--_U---^V-_T--^O--_×--^U---_Δ-^T---_T^M----^I--^N----⁾---–-----1---0---⁶-
5: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
6: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value measured at a 1.5V differential.
7: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 ms.
8: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dis-
sipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more
details..
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V_IN = V_R + 1.5V, I_L = 100 µA, C_L = 3.3 µF, SHDN > V_IH, T_A = +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
T_A
-40
—
+125
°C (Note 1)
T_J
-40
—
+125
°C
T_A
-65
—
+150
°C
Thermal Resistance, 3L-SOT-223
θ_JA
—
59
—
°C/W
Thermal Resistance, 3L-DDPAK
θ_JA
—
71
—
°C/W
Thermal Resistance, 3L-TO-220
θ_JA
—
71
—
°C/W
Note 1: Operation in this range must not cause T_J to exceed Maximum Junction Temperature (+125°C).
© 2006 Microchip Technology Inc.
DS21375C-page 3