TC1014_07 Datasheet, PDF (3/22 Pages) Microchip Technology – 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass

TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: V_IN = V_R + 1V, I_L = 100 µA, C_L = 1.0 µF, SHDN > V_IH, T_A = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Output Noise
eN
—
600
—
nV/√Hz
—
I_L = I_OUTMAX,
F = 10 kHz
470 pF from Bypass
to GND
SHDN Input High Threshold
V_IH
45
—
—
%V_IN
—
V_IN = 2.5V to 6.5V
SHDN Input Low Threshold
V_IL
—
—
15
%V_IN
—
V_IN = 2.5V to 6.5V
Note 1:
2:
3:
The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ V_R + V_DROPOUT.
V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V_OUT = (V_OUTMAX – V_OUTMIN)x 10⁶
V_OUT x ΔT
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: V_IN = V_R + 1V, I_L = 100 µA, C_L = 1.0 µF, SHDN > V_IH, T_A = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges:
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
T_A
-40
—
+125
°C
T_A
-40
—
+125
°C
T_A
-65
—
+150
°C
θ_JA
—
256
—
°C/W
© 2007 Microchip Technology Inc.
DS21335E-page 3