TC1014_07 Datasheet, PDF (2/22 Pages) Microchip Technology – 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass

TC1014/TC1015/TC1185
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V_IN + 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........V_IN +0.3V to -0.3V
Operating Temperature Range...... -40°C < T_J < 125°C
Storage Temperature..........................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: V_IN = V_R + 1V, I_L = 100 µA, C_L = 1.0 µF, SHDN > V_IH, T_A = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Input Operating Voltage
V_IN
2.7
—
6.0
V
—
Note 1
Maximum Output Current
I_OUTMAX
50
—
—
mA TC1014
100
—
—
TC1015
150
—
—
TC1185
Output Voltage
V_OUT
V_R – 2.5% V_R ±0.5% V_R + 2.5%
V
—
Note 2
V_OUT Temperature Coefficient TCV_OUT
—
—
20
—
ppm/°C
40
—
—
Note 3
Line Regulation
Load Regulation
ΔV_OUT/
—
ΔV_IN
ΔV_OUT/
—
V_OUT
—
0.05
0.5
0.5
0c.35
2
3
%
—
(V_R + 1V) ≤ V_IN ≤ 6V
% TC1014; TC1015 I_L = 0.1 mA to I_OUTMAX
TC1185
I_L = 0.1 mA to I_OUTMAX
(Note 4)
Dropout Voltage
Supply Current (Note 8)
Shutdown Supply Current
Power Supply Rejection
Ratio
V_IN-V_OUT
—
—
—
—
—
I_IN
—
I_INSD
—
PSRR
—
2
—
mV
—
I_L = 100 µA
65
—
—
I_L = 20 mA
85
120
—
I_L = 50 mA
180
250
TC1015; TC1185 I_L = 100 mA
270
400
TC1185
I_L = 150 mA (Note 5)
50
80
µA
—
SHDN = V_IH, I_L = 0
0.05
0.5
µA
—
SHDN = 0V
64
—
dB
—
F_RE ≤ 1 kHz
Output Short Circuit Current
I_OUTSC
—
Thermal Regulation
ΔV_OUT/
—
ΔP_D
Thermal Shutdown Die
Temperature
T_SD
—
300
450
mA
0.04
—
V/W
160
—
°C
—
V_OUT = 0V
—
Notes 6, 7
—
Thermal Shutdown
Hysteresis
ΔT_SD
—
10
—
°C
—
Note 1:
2:
3:
The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ V_R + V_DROPOUT.
V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V_OUT = (V_OUTMAX – V_OUTMIN)x 10⁶
V_OUT x ΔT
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
DS21335E-page 2
© 2007 Microchip Technology Inc.