TC1014 Datasheet, PDF (3/20 Pages) TelCom Semiconductor, Inc – 50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS

TC1014/TC1015/TC1185
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage ...........................(-0.3V) to (V_IN + 0.3V)
Power Dissipation ............... Internally Limited (Note 7)
Maximum Voltage on Any Pin .........V_IN +0.3V to -0.3V
Operating Temperature Range ......-40°C < T_J < 125°C
Storage Temperature ......................... -65°C to +150°C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V_IN = V_R + 1V, I_L = 100µA, C_L = 3.3µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max Units
Device
Test Conditions
V_IN
I_OUTMAX
Input Operating Voltage
Maximum Output Current
2.7
—
6.0
V
50
—
—
mA TC1014
100
—
—
TC1015
150
—
—
TC1185
Note 1
V_OUT
TCV_OUT
Output Voltage
V_R – 2.5% V_R ±0.5% V_R + 2.5% V
V_OUT Temperature Coefficient
—
20
—
ppm/°C
—
40
—
Note 2
Note 3
∆V_OUT/∆V_IN Line Regulation
∆V_OUT/V_OUT Load Regulation
—
0.05
0.35
%
(V_R + 1V) ≤ V_IN ≤ 6V
—
0.5
2
% TC1014; TC1015 I_L = 0.1mA to I_OUTMAX
—
0.5
3
TC1185
I_L = 0.1mA to I_OUTMAX
(Note 4)
V_IN-V_OUT Dropout Voltage
I_IN
I_INSD
PSRR
Supply Current (Note 8)
Shutdown Supply Current
Power Supply Rejection
Ratio
—
2
—
mV
I_L = 100µA
—
65
—
I_L = 20mA
—
85
120
I_L = 50mA
—
180
250
TC1015; TC1185 I_L = 100mA
—
270
400
TC1185
I_L = 150mA (Note 5)
—
50
80
µA
SHDN = V_IH, I_L = 0
—
0.05
0.5
µA
SHDN = 0V
—
64
—
dB
F_RE ≤ 1kHz
I_OUTSC
Output Short Circuit Current
—
∆V_OUT/∆P_D Thermal Regulation
—
T_SD
Thermal Shutdown Die
—
Temperature
300
450
mA
0.04
—
V/W
160
—
°C
V_OUT = 0V
Notes 6, 7
∆T_SD
Thermal Shutdown
Hysteresis
—
10
—
°C
eN
Output Noise
—
600
—
nV/√Hz
I_L = I_OUTMAX, F = 10kHz
470pF from Bypass
to GND
Note 1: The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ V_R + V_DROPOUT.
2: V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3: TC V_OUT = (V_OUTMAX – V_OUTMIN)x 10⁶
V_OUT x ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
© 2002 Microchip Technology Inc.
DS21335B-page 3