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TC1014 Datasheet, PDF (10/20 Pages) TelCom Semiconductor, Inc – 50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
5.025
5.020
5.015
Output Voltage vs. Temperature
VOUT = 5V
ILOAD = 10mA
5.010
5.005
5.000
4.995
4.990
4.985
CIN = 1µF
COUT = 1µF
VIN = 6V
-40 -20 -10 0
20 40
TEMPERATURE (°C)
85 125
Output Voltage vs. Temperature
4.994
4.992
4.990
VOUT = 5V
ILOAD = 150mA
4.988
4.986
4.984
4.982
4.980
4.978
4.976
4.974
CIN = 1µF
COUT = 1µF
VIN = 6V
-40 -20 -10 0 20 40
TEMPERATURE (°C)
85 125
Temperature vs. Quiescent Current
70
VOUT = 5V
60 ILOAD = 10mA
50
40
30
20
CIN = 1µF
10 COUT = 1µF
VIN = 6V
0
-40 -20 -10 0 20 40
TEMPERATURE (°C)
85 125
Temperature vs. Quiescent Current
80
70
VOUT = 5V
ILOAD = 150mA
60
50
40
30
20 CIN = 1µF
10 COUT = 1µF
VIN = 6V
0
-40 -20 -10 0 20 40
TEMPERATURE (°C)
85 125
Output Noise vs. Frequency
10.0
RLOAD = 50Ω
COUT = 1µF
CIN = 1µF
CBYP = 0
1.0
0.1
Stability Region vs. Load Current
1000
COUT = 1µF
to 10µF
100
10
1
Stable Region
0.1
0.0
0.01K 0.1K 1K 10K 100K 1000K
FREQUENCY (Hz)
0.01
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
Power Supply Rejection Ratio
-30
-35
IOUT = 10mA
VINDC = 4V
-40 VINAC = 100mVp-p
-45
VOUT = 3V
CIN = 0
-50 COUT = 1µF
-55
-60
-65
-70
-75
-80
0.01K 0.1K 1K 10K 100K 1000K
FREQUENCY (Hz)
DS21335B-page 10
© 2002 Microchip Technology Inc.