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TC1014 Datasheet, PDF (11/20 Pages) TelCom Semiconductor, Inc – 50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
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TC1014/TC1015/TC1185
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448µS
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184µS
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100µS
VSHDN
VOUT
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52µS
VSHDN
VOUT
© 2002 Microchip Technology Inc.
DS21335B-page 11
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