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PIC16F648A-I Datasheet, PDF (3/34 Pages) Microchip Technology – Push-Pull Output Sub-Microamp Comparators
MCP6541/1R/1U/2/3/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C,VIN+ = VDD/2,
VIN– = VSS, and RL = 100 kΩ to VDD/2 (Refer to Figure 1-3).
Parameters
Sym
Min
Typ
Max Units
Conditions
Push-Pull Output
High-Level Output Voltage
VOH
VDD−0.2
—
—
V IOUT = -2 mA, VDD = 5V
Low-Level Output Voltage
VOL
—
—
VSS+0.2 V IOUT = 2 mA, VDD = 5V
Short-Circuit Current
ISC
— -2.5, +1.5 —
mA VDD = 1.6V (Note 4)
ISC
—
±30
—
mA VDD = 5.5V (Note 4)
Note 1: The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the difference
between the input-referred trip points.
2: VHYST at different temperatures is estimated using VHYST (TA) = VHYST + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.
3: Input bias current at temperature is not tested for SC-70-5 package.
4: Limit the output current to Absolute Maximum Rating of 30 mA.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2,
Step = 200 mV, Overdrive = 100 mV, and CL = 36 pF (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym Min Typ Max Units
Conditions
Rise Time
tR
—
0.85
—
Fall Time
tF
—
0.85
—
Propagation Delay (High-to-Low)
tPHL
—
4
8
Propagation Delay (Low-to-High)
tPLH
—
4
8
Propagation Delay Skew
tPDS
—
±0.2
—
Maximum Toggle Frequency
fMAX
—
160
—
fMAX
—
120
—
Input Noise Voltage
Eni
—
200
—
Note 1: Propagation Delay Skew is defined as: tPDS = tPLH - tPHL.
µs
µs
µs
µs
µs (Note 1)
kHz
kHz
µVP-P
VDD = 1.6V
VDD = 5.5V
10 Hz to 100 kHz
MCP6543 CHIP SELECT (CS) CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = VSS,
and CL= 36 pF (Refer to Figures 1-1 and 1-3).
Parameters
Sym Min Typ Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—
0.2 VDD
V
CS Input Current, Low
ICSL
—
5.0
—
pA CS = VSS
CS High Specifications
CS Logic Threshold, High
VIH
0.8 VDD —
VDD
V
CS Input Current, High
ICSH
—
1
—
pA CS = VDD
CS Input High, VDD Current
IDD
—
18
—
pA CS = VDD
CS Input High, GND Current
ISS
—
–20
—
pA CS = VDD
Comparator Output Leakage
IO(LEAK)
—
1
—
pA VOUT = VDD, CS = VDD
CS Dynamic Specifications
CS Low to Comparator Output Low
tON
—
2
50
ms CS = 0.2 VDD to VOUT = VDD/2,
Turn-on Time
VIN– = VDD
CS High to Comparator Output
High Z Turn-off Time
tOFF
—
10
—
µs CS = 0.8 VDD to VOUT = VDD/2,
VIN– = VDD
CS Hysteresis
VCS_HYST
—
0.6
—
V VDD = 5V
© 2006 Microchip Technology Inc.
DS21696E-page 3