CNY1733SD Datasheet, PDF (3/15 Pages) Microchip Technology – CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix (eg. CNY17F2M)

Individual Component Characteristics (Continued)
Parameters
DETECTOR
Breakdown Voltage
Collector to Emitter
Test Conditions
I_C = 1.0 mA, I_F = 0
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Collector to Base
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
I_C = 10 µA, I_F = 0
I_E = 100 µA, I_F = 0
V_CE = 10 V, I_F = 0
V_CB = 10 V, I_F = 0
V_CE = 0, f = 1 MHz
V_CB = 0, f = 1 MHz
V_EB = 0, f = 1 MHz
Symbol Device
Min Typ Max Units
MOC8101/2/3/4/5 30
100
V
BV _CEO
MOC8106/7/8
70
100
CNY17F1/2/3/4/M
CNY171/2/3/4/M
BV_CBO CNY171/2/3/4/M
70
120
BV _ECO
All
7
10
I _CEO
I _CBO
All
CNY171/2/3/4/M
1
50
nA
20
nA
C _CE
All
8
pF
C _CB
CNY171/2/3/4/M
20
pF
C _EB
CNY171/2/3/4/M
10
pF
Isolation Characteristics
Characteristic
Test Conditions
Input-Output Isolation Voltage f = 60 Hz, t = 1 min. (4)
f = 60 Hz, t = 1 sec. (4)
Isolation Resistance
Isolation Capacitance
V_I-O = 500 VDC (4)
V_I-O = Ø, f = 1 MHz (4)
Symbol
V _ISO
R _ISO
C _ISO
Device
Black Package
‘M’ White Package
All
Black Package
‘M’ White Package
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T_A = 25°C
Min
5300
7500
10 ¹¹
Typ**
0.5
0.2
Max
Units
Vac(rms)*
Vac(pk)
Ω
pF
3
CNY17X, CNY17FX, MOC810X Rev. 1.0.5
www.fairchildsemi.com