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MRF89XAM9A_12 Datasheet, PDF (27/36 Pages) Microchip Technology – 915 MHz Ultra Low-Power Sub-GHz Transceiver Module | |||
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MRF89XAM9A
TABLE 4-6: TRANSMITTER AC CHARACTERISTICS(1)
Symbol
Description
Min Typ Max
RFOP RF Output Power, Programmable â +12.5
â
with 8 Steps of typ. 3 dB
â
-8.5
â
PN
Phase Noise
â
-112
â
TXSP
Transmitted Spurious
â
â
-47
Tx2
Tx3
Tx4
Txn
FSKDEV
TSTWF
Second Harmonic
Third Harmonic
Fourth Harmonic
Harmonics above Tx4
FSK Deviation
Transmitter Wake-up Time
â
â
-40
±33 ±55 ±200
â
120
500
Unit
dBm
dBm
Condition
Maximum power setting
Minimum power setting
dBc/Hz
dBc
Measured with a 600 kHz
offset at the transmitter output
At any offset between 200 kHz
and 600 kHz, unmodulated
carrier, fdev = 50 kHz
No modulation, see Note(2)
dBm
kHz
Programmable
µs
From FS to Tx ready
TSTWS
Transmitter Wake-up Time
â
600
900
µs
From Stand-by to Tx ready
Note 1: Guaranteed by design and characterization.
2: Transmitter in-circuit performance with SAW filter and crystal.
4.1 Timing Specification and Diagram
TABLE 4-7: SPI TIMING SPECIFICATION(1,2)
Parameter
Min
Typ
Max
Unit
Condition
SPI Configure Clock Frequency
â
â
6
MHz
â
SPI Data Clock Frequency
â
â
1
MHz
â
Data Hold and Setup Time
2
â
â
µs
â
SDI Setup Time for SPI Configure
250
â
â
ns
â
SDI Setup Time for SPI Data
312
â
â
ns
â
CSCON Low to SCK Rising Edge;
500
â
â
ns
â
SCK Falling Edge to CSCON High
CSDATA Low to SCK Rising Edge;
625
â
â
ns
â
SCK Falling Edge to CSDATA High
CSCON Rising to Falling Edge
500
â
â
ns
â
CSDATA Rising to Falling Edge
625
â
â
ns
â
Note 1: Typical Values: TA = 25°C, VIN = 3.3V, Crystal Frequency = 12.8 MHz, unless otherwise specified.
2: Negative current is defined as the current sourced by the pin.
ï£ 2011-2012 Microchip Technology Inc.
Preliminary
DS75017B-page 27
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