TCM1617 Datasheet, PDF (2/14 Pages) Microchip Technology – SMBus Thermal Sensor with External Diode Input

SMBus Thermal Sensor with External Diode Input
TCM1617
ABSOLUTE MAXIMUM RATINGS*
Power Supply Voltage (V_DD) .........................................6V
Voltage On Any Pin ............ (GND – 0.3V) to (V_DD + 0.3V)
Operating Temperature (T_A) .................. –55°C to +125°C
Storage Temperature (T_STG) .................. –65°C to +150°C
SMBus Input/Output Current ................. –1 mA to +50 mA
D– Input Current ......................................................±1 mA
Max. Power Dissipation ........................................330 mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: V_DD = 3.3V, –55°C ≤ T_A ≤ 125°C, unless otherwise noted.
Symbol Parameter
Test Conditions
Min
Typ
Max
Power Supply
V_DD
V_UV-LOCK
Power Supply Voltage
V_DD Undervoltage
Lockout Threshold
V_POR
I_DD
Power-On Reset Threshold
Operating Current
I_DD
Operating Current
I_DD-STANDBY Standby Supply Current
I_DD-STANDBY Standby Supply Current
I_ADD-BIAS ADD[1:0] Bias Current
ALERT# Output
V_OL
Output Low Voltage
ADD[1:0] Inputs
V_IL
Logic Input Low
V_IH
Logic Input High
STBY# Input
V_IL
Logic Input Low
V_IH
Logic Input High
Temp-to-Bits Converter
T_RES
Basic Temperature Resolution
T_IERR1
Internal Diode Temperature
T_EERR
External Diode Temperature
(Note 4)
I_DIODE-HIGH
I_DIODE-LOW
V_D-SOURCE
External Diode
High Source Current
External Diode
Low Source Current
D– Source Voltage
–55 ≤ T_A ≤ +125°C
V_DD Falling Edge
0.25 Conv./Sec Rate
SMBus Inactive (Note 1)
2 Conv./Sec Rate
SMBus Inactive (Note 1)
V_DD = 3.3V SMBus Active
V_DD = 3.3V, SMBus Inactive
Power-Up Only
I_OL = 1.0 mA (Note 3)
+60°C ≤ T_A ≤ +100°C
0°C ≤ T_A ≤ +125°C
–55°C ≤ T_A < 0°C
+60°C ≤ T_A ≤ +100°C
0°C ≤ T_A ≤ +125°C –3
–55°C ≤ T_A < 0°C
(D+) – (D–) ~ 0.65V
(D+) – (D–) ~ 0.65V
3.0
—
5.5
2.4
2.80
2.95
1.0
1.7
2.3
—
—
70
—
—
180
—
—
100
—
—
10
—
160
—
—
—
0.4
—
—
V_DD x 0.7
—
—
—
V_DD x 0.7
—
—
1
–2
—
–3
—
—
±3
–3
—
–5
—
±5
—
100
—
10
—
0.7
V_DD x 0.3
—
V_DD x 0.3
—
—
+2
+3
—
+3
+5
—
—
—
—
Unit
V
V
V
µA
µA
µA
µA
µA
V
V
V
V
V
°C
°C
°C
°C
°C
°C
µA
µA
V
TCM1617-1 2/5/99
2
 2001 Microchip Technology Inc. DS21485A