TC1017 Datasheet, PDF (2/22 Pages) Microchip Technology – 150 mA, Tiny CMOS LDO With Shutdown

TC1017
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Output Voltage ......................................... (–0.3) to (V_IN + 0.3)
Power Dissipation .......................... Internally Limited (Note 7)
Maximum Voltage On Any Pin ................. V_IN + 0.3V to –0.3V
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
PIN FUNCTION TABLE
Name
Function
SHDN
NC
GND
V_OUT
V_IN
Shutdown control input.
No connect
Ground terminal
Regulated voltage output
Unregulated supply input
Electrical Specifications: Unless otherwise noted, V_IN = V_R + 1V, I_L = 100 µA, C_L = 1.0 µF, SHDN > V_IH, T_A = +25°C
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
Input Operating Voltage
Maximum Output Current
Output Voltage
V_OUT Temperature Coefficient
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
V_IN
I_OUTMAX
V_OUT
TCV_OUT
|(∆V_OUT/∆V_IN)| / V_R
|∆V_OUT| / V_R
V_IN – V_OUT
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Wake-Up Time
(from Shutdown Mode)
I_IN
I_INSD
PSRR
t_WK
2.7
150
V_R – 2.5%
—
—
—
—
—
—
—
—
—
—
—
—
—
V_R ±0.5%
40
0.04
0.38
2
90
180
285
53
0.05
58
10
6.0
—
V_R + 2.5%
—
0.2
1.5
—
200
350
500
90
2
—
—
V
mA
V
ppm/°C
%/V
%
mV
µA
µA
dB
µs
Note 1:
2:
3:
The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ (V_R + 2.5%) + V_DROPOUT.
V_R is the regulator voltage setting. For example: V_R = 1.8V, 2.7V, 2.8V, 3.0V.
TCVOUT
=
(_---V_{----O-----U-----T---M------A----X-----–-----}V_{----O----U-----T----M-----I---N----})_----×_{-----1--0----6-}
VOUT × ∆T
Note 1
Note 2
Note 3
(V_R + 1V) < V_IN < 6V
I_L = 0.1 mA to I_OUTMAX
I_L = 100 µA
I_L = 50 mA
I_L = 100 mA
I_L = 150 mA
SHDN = V_IH, I_L = 0
SHDN = 0V
f =1 kHz, I_L = 50 mA
V_IN = 5V, I_L = 60 mA,
C_IN = C_OUT =1 µF,
f = 100 Hz
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for t = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1, “Thermal Considerations”, for
more details.
DS21813B-page 2
 2003 Microchip Technology Inc.