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MIC2174_10 Datasheet, PDF (14/27 Pages) Micrel Semiconductor – Synchronous Buck Controller Featuring Adaptive On-Time Control 40V Input, 300kHz
Micrel, Inc.
Application Information
MOSFET Selection
The MIC2174/MIC2174C controller works from input
voltages of 3V to 40V and has an external 3V to 5.5V VIN
to provide power to turn the external N-Channel power
MOSFETs for the high- and low-side switches. For
applications where VIN < 5V, it is necessary that the
power MOSFETs used are sub-logic level and are in full
conduction mode for VGS of 2.5V. For applications when
VIN > 5V; logic-level MOSFETs, whose operation is
specified at VGS = 4.5V must be used.
There are differing criteria for choosing the high-side and
low-side MOSFETs. These differences are more
significant at lower duty cycles, such as a 12V to 1.8V
conversion. In such an application, the high-side
MOSFET is required to switch as quickly as possible to
minimize transition losses, whereas the low-side
MOSFET can switch slower, but must handle larger
RMS currents. When the duty cycle approaches 50%,
the current carrying capability of the high-side MOSFET
starts to become critical.
It is important to note that the on-resistance of a
MOSFET increases with increasing temperature. A 75°C
rise in junction temperature will increase the channel
resistance of the MOSFET by 50% to 75% of the
resistance specified at 25°C. This change in resistance
must be accounted for when calculating MOSFET power
dissipation and in calculating the value of current limit.
Total gate charge is the charge required to turn the
MOSFET on and off under specified operating conditions
(VDS and VGS). The gate charge is supplied by the
MIC2174/MIC2174C gate-drive circuit. At 300kHz
switching frequency and above, the gate charge can be
a significant source of power dissipation in the
MIC2174/MIC2174C. At low output load, this power
dissipation is noticeable as a reduction in efficiency. The
average current required to drive the high-side MOSFET
is:
IG[high-side] (avg) = QG × fSW
(5)
where:
IG[high-side](avg) = Average high-side MOSFET gate
current
QG = Total gate charge for the high-side MOSFET taken
from the manufacturer’s data sheet for VGS = VIN.
fSW = Switching Frequency (300kHz)
MIC2174/MIC2174C
The low-side MOSFET is turned on and off at VDS = 0
because an internal body diode or external freewheeling
diode is conducting during this time. The switching loss
for the low-side MOSFET is usually negligible. Also, the
gate-drive current for the low-side MOSFET is more
accurately calculated using CISS at VDS = 0 instead of
gate charge.
For the low-side MOSFET:
IG[low-side] (avg) = CISS × VGS × fSW
(6)
Since the current from the gate drive comes from the VIN,
the power dissipated in the MIC2174/MIC2174C due to
gate drive is:
PGATEDRIVE = VIN × (IG[high-side] (avg) + IG[low -side] (avg)) (7)
A convenient figure of merit for switching MOSFETs is
the on resistance times the total gate charge RDS(ON) ×
QG. Lower numbers translate into higher efficiency. Low
gate-charge logic-level MOSFETs are a good choice for
use with the MIC2174/MIC2174C. Also, the RDS(ON) of
the low-side MOSFET will determine the current limit
value. Please refer to “Current Limit” subsection in
“Functional Description” for more details.
Parameters that are important to MOSFET switch
selection are:
• Voltage rating
• On-resistance
• Total gate charge
The voltage ratings for the high-side and low-side
MOSFETs are essentially equal to the power stage input
voltage VHSD. A safety factor of 20% should be added to
the VDS(max) of the MOSFETs to account for voltage
spikes due to circuit parasitic elements.
The power dissipated in the MOSFETs is the sum of the
conduction losses during the on-time (PCONDUCTION) and
the switching losses during the period of time when the
MOSFETs turn on and off (PAC):
PSW = PCONDUCTION + PAC
PCONDUCTION = ISW(RMS) 2 × RDS(ON)
PAC = PAC(off ) + PAC(on)
where:
RDS(ON) = on-resistance of the MOSFET switch
D = Duty Cycle = VOUT / VHSD
(8)
(9)
(10)
September 2010
14
M9999-091310-C