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MDV1951B Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 12A, 45m(ohm)
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10
※ Note : ID = 4.5A
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
100 us
101
1 ms
10 ms
100
Operation in This Area
is Limited by R
DS(on)
100 ms
1s
10-1
Single Pulse
T =Max Rated
J
T =25oC
A
10-2
10-1
100
10 s
DC 100 s
101
102
V , Drain-Source Voltage [V]
DS
Fig.9 Maximum Safe Operating Area
102
D=0.5
101 0.2
0.1
0.05
100 0.02
0.01
10-1
single pulse
10-2
10-4
10-3
، طNotes :
Duty Factor, D=t /t
12
PEAK T = P * Z * R (t) + T
J
DM ¥èJC ¥èJC
C
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [sec]
1
Fig.11 Transient Thermal Response
Curve
700
600
500
Ciss
400
300
200
100
0
0
Coss
Crss
5
10
15
20
25
30
VDS [V]
Fig.8 Capacitance Characteristics
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T , Ambient Temperature [oC]
A
Fig.10 Maximum Drain Current
vs. Ambient Temperature
Aug. 2015. Version3.0
4
MagnaChip Semiconductor Ltd.
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