MDV1951B Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 12A, 45m(ohm)

MDV1951B
Single N-channel Trench MOSFET 60V, 12A, 45mΩ
General Description
The MDV1951 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1951 is suitable for DC/DC converter and
general purpose applications.
Features
 VDS = 60V
 ID = 12A @VGS = 10V

RDS(ON)
< 45mΩ @VGS = 10V
< 55mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested
D
DD DD
DD DD
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC (Silicon limited)
TC=25^oC (Package limited)
TC=70^oC
TA=25^oC
TA=70^oC
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Aug. 2015. Version3.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
60
±20
14.6
12.0
9.5
6.6 ⁽³⁾
5.3 ⁽³⁾
48.0
24.0
15.3
3.4 ⁽³⁾
2.2 ⁽³⁾
11.2
-55~150
Unit
V
V
A
A
W
mJ
o_C
Symbol
RθJA
RθJC
Rating
36
5.2
Unit
o_C/W
MagnaChip Semiconductor Ltd.