MDV1951B Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 12A, 45m(ohm)

Ordering Information
Part Number
MDV1951BURH
Temp. Range
-55~150^oC
Package
PowerDFN33
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (T_J = 25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.0A
VDS = 10V, ID = 3.3A
VDS = 30V, ID = 4.5A,
VGS = 10V
VDS = 30V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 30V,
ID = 4.4A, RG = 5.0Ω
f=1 MHz
IS = 1A, VGS = 0V
IF = 4.5A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, VDD = 40V, L = 0.1mH, IAS =15.0A, VGS = 10V
3. T < 10sec.
Min Typ
Max Unit
60
-
-
V
1.0
1.9
3.0
-
-
1
μA
-
-
±0.1
-
37
45
mΩ
-
44
55
-
11
-
S
-
9.0
10.5
-
4.4
-
nC
-
1.5
-
-
2.0
-
-
420
-
-
25
-
pF
-
50
-
-
5
-
-
20
-
ns
-
15
-
-
10
-
-
2.5
3.5
Ω
-
0.7
1.1
V
-
21
30
ns
-
25
-
nC
Aug. 2015. Version3.0
2
MagnaChip Semiconductor Ltd.