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| MDU1517 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 100.0A, 2.9m(ohm) | |||
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10
â» Note : ID = 26A
VDS = 15V
8
6
4
2
0
0
4
8 12 16 20 24 28 32 36 40 44
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
3500
3000
2500
2000
1500
1000
500
0
0
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
103
Operation in This Area
is Limited by R DS(on)
102
10 ms
100 ms
10s 1s
101
DC
100
Single Pulse
TJ=Max rated
TC=25â
10-1
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
120
100
80
60
40
20
0
25
50
75
100
125
150
TA, Case Temperature [â]
Fig.10 Maximum Drain Current vs.
Case Temperature
101
D=0.5
100
0.2
0.1
10-1 0.05
0.02
10-2 0.01
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK T = P * Z * R (t) + T
J DM θ JC θ JC
C
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
May. 2011. Version 1.2
4
MagnaChip Semiconductor Ltd.
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