MDU1517 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 100.0A, 2.9m(ohm)

MDU1517
Single N-channel Trench MOSFET 30V, 100.0A, 2.9mΩ
General Description
The MDU1517 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1517 is suitable device for DC to DC
converter and general purpose applications.
Features
VDS = 30V
ID = 100.0A @VGS = 10V
RDS(ON) (MAX)
< 2.9mΩ @VGS = 10V
< 4.4mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
DD DD
DD DD
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
May. 2011. Version 1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
100.0
96.0
32.9⁽³⁾
26.2⁽³⁾
100
73.5
47.0
5.5⁽³⁾
3.5⁽³⁾
187
-55~150
Unit
V
V
A
A
W
mJ
o_C
Symbol
RθJA
RθJC
Rating
22.7
1.7
Unit
o_C/W
MagnaChip Semiconductor Ltd.