MDU1517 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 100.0A, 2.9m(ohm)

100
V_GS = 10V
90
80
4.0V
4.5V
70
5.0V
60
50
3.5V
40
30
20
3.0V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V_GS = 10 V
1.6
2. I_D = 20.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
18
※ Notes :
V_DS = 5V
15
T_A=25℃
12
9
6
3
0
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
8
6
V_GS = 4.5V
4
V_GS = 10V
2
0
5 10 15 20 25 30 35 40 45 50 55 60
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
100
※ Notes :
I_D = 26.0A
80
60
40
20
T_A = 25℃
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
10
25℃
1
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-V_SD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
May. 2011. Version 1.2
3
MagnaChip Semiconductor Ltd.