 English |
|
|
|
|
|
|
|
| MDU1514 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 66.3A, 6.0m(ohm) | |||
| |||
| ◁ |
10
â» Note : ID = 18A
VDS = 15V
8
6
4
2
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
1500
Ciss
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
900
600
300
0
0
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
101
Operation in This Area
100
is Limited by R DS(on)
10 ms
100 ms
1s
10 s
DC
Single Pulse
10-1
TJ=Max rated
TC=25â
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
101
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
May. 2011. Version 1.2
4
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TA, Case Temperature [â]
Fig.10 Maximum Drain Current vs.
Case Temperature
MagnaChip Semiconductor Ltd.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese