MDU1514 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 66.3A, 6.0m(ohm)

MDU1514
Single N-channel Trench MOSFET 30V, 66.3A, 6.0mΩ
General Description
The MDU1514 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1514 is suitable device for DC/DC Converter
and general purpose applications.
Features
VDS = 30V
ID = 66.3A @VGS = 10V
RDS(ON)
< 6.0 mΩ @VGS = 10V
< 9.0 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
May. 2011. Version 1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
66.3
53.0
22.8⁽³⁾
18.2⁽³⁾
100
46.2
29.6
5.5⁽³⁾
3.5⁽³⁾
79.0
-55~150
Unit
V
V
A
A
W
mJ
o_C
Symbol
RθJA
RθJC
Rating
22.7
2.7
Unit
o_C/W
MagnaChip Semiconductor Ltd.