MDU1514 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 66.3A, 6.0m(ohm)

Ordering Information
Part Number
MDU1514URH
Temp. Range
-55~150^oC
Package
PowerDFN56
Packing
Tape & Reel
Quantity
3000 units
Rohs Status
Halogen Free
Electrical Characteristics (T_J =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
Min Typ
Max Unit
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
30
-
-
V
1.3
1.9
2.7
VDS = 30V, VGS = 0V
-
-
1
TJ=55^oC
-
-
5
µA
VGS = ±20V, VDS = 0V
-
-
±0.1
VGS = 10V, ID = 18A
-
TJ=125^oC
-
5.2
6.0
7.5
8.7
mΩ
VGS = 4.5V, ID = 14A
-
7.5
9.0
VDS = 5V, ID = 10A
-
33
-
S
VDS = 15.0V, ID = 18A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
ID = 18A , RG = 3.0Ω
f=1 MHz
14.3
19
23.8
6.6
8.8
11.0
nC
-
3
-
-
2.8
-
913 1217 1521
89
119
149
pF
186
248
310
-
7.9
-
-
11.5
-
ns
-
27.0
-
-
8.3
-
1.0
2.0
2.8
Ω
IS = 18A, VGS = 0V
IF = 18A, dl/dt = 100A/µs
-
0.8
1.1
V
-
24.5
36.8
ns
-
16.7
25.1
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 22A, VDD = 27V, VGS = 10V.
3. T < 10sec.
May. 2011. Version 1.2
2
MagnaChip Semiconductor Ltd.