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| MDU06N031 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 100A, 3.1m(ohm) | |||
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10
â» Note : ID = 50A
VDS = 30V
8
6
4
2
0
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
100 us
102
Operation in This Area
101
is Limited by R
DS(on)
100
1 ms
10 ms
100 ms
1s
DC
Single Pulse
TJ=Max rated
T =25â
C
10-1
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
6000
Ciss
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
3000
Coss
2000
1000
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T , Case Temperature [â]
C
Fig.10 Maximum Drain Current vs.
Case Temperature
100
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2
0.01
single pulse
10-3
10-4
10-3
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Jun. 2015. Rev. 1.0
4
MagnaChip Semiconductor Ltd.
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