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| MDU06N031 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 100A, 3.1m(ohm) | |||
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MDU06N031
Single N-channel Trench MOSFET 60V, 100A, 3.1mΩ
General Description
The MDU06N031 uses advanced MagnaChipâs MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU06N031 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
ïº VDS = 60V
ïº ID = 100A @VGS = 10V
ïº
RDS(ON)
< 3.1mΩ @VGS = 10V
ïº 100% UIL Tested
ïº 100% Rg Tested
D
DD DD
DD DD
S SSG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=100oC (Silicon Limited)
TA=25oC(3)
TC=25oC
TC=100oC
TA=25oC(3)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Jun. 2015. Rev. 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
60
±20
164.7
100.0
104.2
22.2(3)
400.0
138.9
55.6
2.5(3)
288
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50.0
0.9
Unit
oC/W
MagnaChip Semiconductor Ltd.
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