MDU06N031 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 100A, 3.1m(ohm)

200
180
160
7.0V
140
8.0V
120
V_GS = 10V
6.0V
100
80
60
40
20
5.0V
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V_GS = 10 V
1.6
2. I_D = 50.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
3.0
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
0
V_GS = 10V
10 20 30 40 50 60 70 80 90 100
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
18
※ Notes :
I_D = 50.0A
16
14
12
10
8
6
T_J = 25℃
4
2
0
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
45
※ Notes :
40
V_DS = 10V
35
30
25
20
T_J=25℃
15
10
5
0
0
1
2
3
4
5
6
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
※ Notes :
100
V = 0V
GS
10
T_J=25℃
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jun. 2015. Rev. 1.0
3
MagnaChip Semiconductor Ltd.