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| MDS5601 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m(ohm) | |||
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10
â» Note : ID = 9A
VDS = 15V
8
6
4
2
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
100 μs
1 ms
101
10 ms
100 ms
1s
10 s
100
100 s DC
10-1
Single Pulse
RthJA=62.5â/W
TA=25â
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
RÎ JA=62.5â/W
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
1.6n
1.4n
1.2n
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1.0n
Ciss
800.0p
600.0p
400.0p
200.0p
0.0
0
Coss
Crss
10
20
VDS, Drain-Source Voltage [V]
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
30
Fig.8 Capacitance Characteristics
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TA, Case Temperature [â]
Fig.10 Maximum Drain Current vs. Case
Temperature
July. 2010. Version 1.0
4
MagnaChip Semiconductor Ltd.
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