MDS5601 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m(ohm)

50
40 ^{VGS = 10V}
4.5V
4.0V
30
5.0V
3.5V
8.0V
20
10
3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. V_GS = 10 V
2. I_D = 5.8 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
20
※ Notes :
V_DS = 10V
16
12
T_A=25℃
8
4
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
20
16
V_GS = 4.5V
12
V_GS = 10V
8
4
0
5
10
15
20
25
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
100
※ Notes :
I_D = 9A
80
60
40
20
T_A = 25℃
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V_GS = 0V
10¹
T_A=25℃
10⁰
10^-1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
July. 2010. Version 1.0
3
MagnaChip Semiconductor Ltd.