MDS5601 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m(ohm)

MDS5601
Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mΩ
General Description
The MDS5601 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS5601 is suitable for DC/DC converter and
general purpose applications.
Features
à V_DS = 30V
à I_D = 12.9A @V_GS = 10V
à
R_DS(ON)
< 10.5mΩ @V_GS = 10V
< 16.1mΩ @V_GS = 4.5V
à 100% UIL Tested
à 100% Rg Tested
7(D₁^6)(D2)5(D2)
8(D₁)
4(G₂)
2(G₁^{3) (S2)}
1(S₁)
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
G1
T_C=25^oC
T_C=70^oC
T_A=25^oC
T_A=70^oC
T_C=25^oC
T_C=70^oC
T_A=25^oC
T_A=70^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
July. 2010. Version 1.0
1
D1
D2
G2
S1
S2
Symbol
V_DSS
V_GSS
I_D
I_DM
P_D
E_AS
T_J, T_stg
Rating
30
±20
12.9
10.4
10.0⁽³⁾
8.0⁽³⁾
40
3.13
2.0
2.0⁽³⁾
1.28⁽³⁾
32
-55~150
Unit
V
V
A
A
W
mJ
o_C
Symbol
R_θJA
R_θJC
Rating
62.5
40
Unit
o_C/W
MagnaChip Semiconductor Ltd.