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| MDS3651 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -6.0A, 35m(ohm) | |||
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10
â» Note : ID = -6.5A
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
-QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
1 ms
10 ms
100 ms
1s
100 us
DC
10-1
10-2
10-1
Single Pulse
Rθ j=a 62.5â /W
Ta=25â
100
101
-VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
1200
1100
1000
C
iss
900
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
C =C
rss
gd
800
700
600
500
400
300
Coss
200
100
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
-V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
Ta, Ambient Temperature [â ]
Fig.10 Maximum Drain Current vs.
Case Temperature
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ Ja* Rθ J(at) + Ta
RÎ JA=62.5â /W
10-3
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
January 2009. Version 2.0
4
MagnaChip Semiconductor Ltd.
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