MDS3651 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -6.0A, 35m(ohm)

MDS3651
Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ
General Description
The MDS3651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
 VDS = -30V
 ID = -6.0A @ VGS = -10V

RDS(ON)
<35m @ VGS = -10V
<55m @ VGS = -4.5V
Applications
 Inverters
 General purpose applications
D
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
G
S
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation⁽¹⁾
Single Pulse Avalanche Energy⁽²⁾
Junction and Storage Temperature Range
Ta=25^oC
Ta=100^oC
Ta=25^oC
Ta=100^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
-30
V
±20
V
-6.0
A
-4.1
A
-30
A
2
W
0.8
60.5
mJ
-55~150
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
62.5
60
Unit
o_C/W
January 2009. Version 2.0
1
MagnaChip Semiconductor Ltd.