MDS3651 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -6.0A, 35m(ohm)

ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10.0V
-4.5V
-6.0V
25
-4.0V
-5.0V
20
15
-3.5V
10
5
-3.0V
0
0
1
2
3
4
5
-V_DS [V]
Fig.1 On-Region Characteristics
60
50
V_GS=-4.5V
40
30
V_GS=-10V
20
10
0
5
10
15
20
-I_D [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.8
※ Notes :
1.6
1. V_GS = -10 V
2. I = 6.5 A
D
1.4
1.2
1.0
V_GS=-10V
V =-4.5V
GS
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
60
50
T_A = 125℃
40
T_A = 25℃
30
20
10
3
4
5
6
7
8
9
10
-V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
* Notes ;
1. V_DS=-5V
15
10
25℃
5
125℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V_GS [V]
Fig.5 Transfer Characteristics
January 2009. Version 2.0
3
10
125℃
25℃
1
0.1
0.4
0.6
0.8
1.0
-V [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
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