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| MDS1653 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 12A, 12m(ohm) | |||
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10
â» Note : ID = 12A
8
6
4
2
0
0
5
10
15
20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
101
Operation in This Area
is Limited by R DS(on)
100
10 us
1 ms
10 ms
100 ms
1s
DC
10-1
Single Pulse
Rθ JA=50â/W
Ta=25â
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
10
20
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
14
12
10
8
6
4
2
0
25
50
75
100
125
150
Ta, Ambient Temperature [â]
Fig.10 Maximum Drain Current vs.
Ambient Temperature
10
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
R =50â/W
Î JA
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
Feb. 2011. Version 1.1
4
MagnaChip Semiconductor Ltd.
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