MDS1653 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 12A, 12m(ohm)

100
10V
6.0V
5.0V
80
4.5V
60
4.0V
40
3.5V
20
3.0V
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.6
※ Notes :
1. V_GS = 10 V
1.4
2. I_D = 12 A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
0.2
4.5V
0.1
10V
0.0
0
10
20
30
40
50
60
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
25
20
15
125℃
10
25℃
5
0
2
4
6
8
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
60
※ Notes :
V_DS = 5V
40
20
125℃
25℃
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Feb. 2011. Version 1.1
3
10²
※ Notes :
V_GS = 0V
10¹
10⁰
10^-1
125℃
10^-2
25℃
10^-3
10^-4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.