MDS1653 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 12A, 12m(ohm)

MDS1653
Single N-Channel Trench MOSFET 30V, 12A, 12mΩ
General Description
The MDS1653 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance,
high switching performance and excellent reliability.
MDS1653 is suitable device for DC-DC Converters
and general purpose applications.
Features
à V_DS = 30V
à I_D = 12A @V_GS = 10V
à
R_DS(ON)
< 12.0mΩ @V_GS = 10V
< 17.5mΩ @V_GS = 4.5V
Applications
à DC-DC Converters
5(D)
6(D)
D
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation ⁽¹⁾
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
G
T_a=25^oC
T_a=100^oC
T_a=25^oC
T_a=100^oC
Feb. 2011. Version 1.1
1
S
Symbol
V_DSS
V_GSS
I_D
I_DM
P_D
E_AS
T_J, T_stg
Rating
Unit
30
V
±20
V
12
A
8.6
A
50
A
2.5
W
1.25
50
mJ
-55~150
o_C
Symbol
R_θJA
R_θJC
Rating
50
25
Unit
o_C/W
MagnaChip Semiconductor Ltd.