 English |
|
|
|
|
|
|
|
| MDS1521 Datasheet, PDF (4/5 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 28.2A, 4.0m(ohm) | |||
| |||
| ◁ |
10
â» Note : ID = 15A
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
3500
3000
2500
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
1500
1000
500
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
Operation in This Area
102
is Limited by R DS(on)
101
100
1 ms
10 ms
100 ms
1s
10s
DC
Single Pulse
10-1
TJ=Max rated
TC=25â
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs.
Case Temperature
102
D=0.5
101
0.2
0.1
0.05
100
0.02
0.01
10-1
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-2
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
June. 2011. Version 1.2
4
MagnaChip Semiconductor Ltd.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese