MDS1521 Datasheet, PDF (1/5 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 28.2A, 4.0m(ohm)

MDS1521
Single N-channel Trench MOSFET 30V, 28.2A, 4.0mΩ
General Description
The MDS1521 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1521 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 28.2A @VGS = 10V
RDS(ON)
< 4.0mΩ @VGS = 10V
< 5.5mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
June. 2011. Version 1.2
1
D
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
28.2
22.6
18.8⁽³⁾
15.1⁽³⁾
40
5.6
3.6
2.5⁽³⁾
1.6⁽³⁾
223
-55~150
Unit
V
V
A
A
W
mJ
o_C
Symbol
RθJA
RθJC
Rating
50
22
Unit
o_C/W
MagnaChip Semiconductor Ltd.