MDS1521 Datasheet, PDF (3/5 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 28.2A, 4.0m(ohm)

30
3.5V
25
4.5V
5.0V
20
8.0V
15
V_GS = 10V
3.0V
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
V_GS=10V
1.6
I_D=15A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
10
8
6
V_GS = 4.5V
4
V_GS = 10V
2
0
5
10
15
20
25
30
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
40
※ Notes :
I_D = 15A
30
20
10
T_A = 25℃
0
2
4
6
8
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
※ Notes :
V_DS = 5V
12
8
T_A=25℃
4
0
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
※ Notes :
10¹
V_GS = 0V
T_A=25℃
10⁰
10^-1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
June. 2011. Version 1.2
3
MagnaChip Semiconductor Ltd.