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| MDP1932 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm) | |||
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10
â» Note : ID = 50A
VDS = 50V
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
102
100 us
Operation in This Area
is Limited by R DS(on)
101
100
10-1
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
VDS, Drain-Source Voltage [V]
1 ms
10 ms
100 ms
DC
102
Fig.9 Maximum Safe Operating Area
10000
Ciss
8000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
Coss
4000
2000
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature [â ]
Fig.10 Maximum Drain Current vs.
Case Temperature
100
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2
0.01
10-3
single pulse
10-4
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-5
10-5
10-4
10-3
10-2
10-1
100
101
102
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Aug. 2014. Version 1.1
4
MagnaChip Semiconductor Ltd.
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