MDP1932 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm)

200
6.0V
180
160
7.0V
8.0V
140
V = 10V
5.0V
GS
120
100
80
4.5V
60
40
4.0V
20
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.5
※ Notes :
1. V_GS = 10 V
2. I_D = 50 A
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
2.5
0
V_GS = 10V
50
100
150
200
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
18
※ Notes :
I_D = 50A
16
14
12
10
8
6
T_A = 25℃
4
2
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
※ Notes :
90
V_DS = 10V
80
70
60
50
T_A=25℃
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
※ Notes :
100
V = 0V
GS
10
T_A=25℃
1
0.0
0.3
0.6
0.9
1.2
1.5
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Aug. 2014. Version 1.1
3
MagnaChip Semiconductor Ltd.