MDP1932 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm)

MDP1932
Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ
General Description
The MDP1932 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1932 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
 VDS = 80V
 ID = 120A @VGS = 10V

RDS(ON)
< 3.4 mΩ @VGS = 10V
 100% UIL Tested
 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TC=100^oC
TC=25^oC
TC=100^oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Aug. 2014. Version 1.1
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
80
V
±20
V
175
120
A
110
480
209
W
84
312.5
mJ
-55~150
o_C
Symbol
RθJA
RθJC
Rating
62.5
0.6
Unit
o_C/W
MagnaChip Semiconductor Ltd.