 English |
|
|
|
|
|
|
|
| MDP1930 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 120A, 2.5m(ohm) | |||
| |||
| ◁ |
10
â» Note : ID = 50A
VDS = 40V
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
102
100 us
Operation in This Area
101
is Limited by R DS(on)
1 ms
10 ms
100 ms
DC
100
10-1
10-1
Single Pulse
T =Max rated
J
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
16000
14000
12000
10000
8000
6000
Ciss
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
4000
2000
Crss
0
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
280
240
200
160
120
80
40
0
25
50
75
100
125
150
T,
C
Case
Temperature
[â
]
Fig.10 Maximum Drain Current vs.
Case Temperature
100
D=0.5
10-1 0.2
0.1
0.05
10-2 0.02
0.01
10-3
10-4 single pulse
10-5
10-5
10-4
â» Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Nov. 2014. Version 1.0
4
MagnaChip Semiconductor Ltd.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese