MDP1930 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 120A, 2.5m(ohm)

MDP1930
Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ
General Description
The MDP1930 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1930 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
 VDS = 80V
 ID = 120A @VGS = 10V

RDS(ON)
< 2.5 mΩ @VGS = 10V
 100% UIL Tested
 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TC=100^oC (Silicon Limited)
TC=100^oC (Package Limited)
TC=25^oC
TC=100^oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Nov. 2014. Version 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
80
V
±20
V
250
120
158
A
120
480
312.5
W
125
612.5
mJ
-55~150
o_C
Symbol
RθJA
RθJC
Rating
62.5
0.4
Unit
o_C/W
MagnaChip Semiconductor Ltd.