MDP1930 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 80V, 120A, 2.5m(ohm)

Ordering Information
Part Number
MDP1930TH
Temp. Range
-55~150^oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (T_J =25^oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate Resistance
Rg
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 64V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 50A
VDS = 10V, ID = 50A
VDS = 40V, ID = 50A,
VGS = 10V
VDS = 40V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 40V,
ID = 50A , RG = 3.0Ω
f=1 MHz
IS = 50A, VGS = 0V
IF = 50A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 35.0A, VGS = 10V.
Min
Typ
Max
Unit
80
-
-
V
2.0
-
4.0
-
-
1.0
μA
-
-
±0.1
-
2.0
2.5
mΩ
-
115
-
S
-
186.3
-
-
56.3
-
nC
-
38.5
-
-
12,222
-
-
51
-
pF
-
2,123
-
-
39.6
-
-
24.2
-
ns
-
141
-
-
54.2
-
-
3.0
-
Ω
-
0.9
1.2
V
-
92.8
ns
-
231.7
nC
Nov. 2014. Version 1.0
2
MagnaChip Semiconductor Ltd.