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| MDP11N60 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 11A, 0.55(ohm) | |||
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10
â» Note : ID = 11A
8
120V
300V
480V
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
10 ïs
100 ïs
1 ms
10 ms
DC
100 ms
10-1
Single Pulse
TJ=Max rated
T =25â
C
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
100
D=0.5
10-1
0.2
0.1
0.05
0.02 0.01
10-2
10-5
10-4
single pulse
â» Notes :
Duty Factor, D=t /t
12
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
RÎ JC=0.69â/W
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
4000
3800
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0.1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes ;
1. V = 0 V
GS
2. f = 1 MHz
Crss
1
10
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs. Case
Temperature
20000
18000
16000
14000
single Pulse
RthJC = 0.69â/W
TC = 25â
12000
10000
8000
6000
4000
2000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Dec. 2014 Version 2.2
4
MagnaChip Semiconductor Ltd.
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