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| MDP11N60 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 11A, 0.55(ohm) | |||
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MDP11N60
N-Channel MOSFET 600V, 11A, 0.55â¦
General Description
The MDP11N60 uses advanced MagnaChipâs MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDP11N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
ïº VDS = 600V
ïº VDS = 660V
ïº ID = 11A
ïº RDS(ON) ⤠0.55Ω
Applications
@ VGS = 10V
@ VGS = 10V
ïº Power Supply
ïº PFC
ïº High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current (â»)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
â» Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
11
6.9
44
182
1.45
4.5
720
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
0.69
Unit
oC/W
Dec. 2014 Version 2.2
1
MagnaChip Semiconductor Ltd.
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