MDP11N60 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 11A, 0.55(ohm)

30
V_gs=5.5V
=6.0V
25
=6.5V
Notes
1. 250㎲ Pulse Test
2. T =25℃
C
=7.0V
=8.0V
20
=10.0V
=15.0V
15
10
5
5
10
15
20
25
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
1. V = 10 V
2.5
GS
2. I_D = 5.5 A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
1.0
0.9
0.8
0.7
0.6
V_GS=10.0V
V_GS=20V
0.5
0.4
0
5
10
15
20
25
30
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. 250 s Pulse Test
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. V_DS=30V
10
150℃ ^25℃
-55℃
1
※ Notes :
1. V = 0 V
GS
2. I_D = 250㎂
10
150℃
25℃
1
0.1
2
4
6
8
10
V_GS [V]
Fig.5 Transfer Characteristics
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Dec. 2014 Version 2.2
3
MagnaChip Semiconductor Ltd.