 English |
|
|
|
|
|
|
|
| MDP06N090 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 62A, 9.0m(ohm) | |||
| |||
| ◁ |
10
â» Note : ID = 50A
VDS = 30V
8
6
4
2
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
102
10 us
100 us
101
Operation in This Area
is Limited by R DS(on)
100
1 ms
10 ms
100 ms
DC
Single Pulse
TJ=Max rated
TC=25â
10-1
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
3500
3000
2500
2000
1500
1000
500
0
0
Ciss
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T , Case Temperature [â]
C
Fig.10 Maximum Drain Current vs.
Case Temperature
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
10-2
10-5
10-4
â» Notes :
Duty Factor, D=t /t
12
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Apr. 2015. Version 1.0
4
MagnaChip Semiconductor Ltd.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese